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hardware documentation programmable linear hall-effect sensor with arbitrary output characteristic hal ? 855 edition nov. 26, 2008 dsh000149_003en data sheet
hal855 data sheet 2 nov. 26, 2008; dsh000149_003en micronas copyright, warranty, and limitation of liability the information and data contained in this document are believed to be accurate and reliable. the software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of micronas. all rights not expressly granted remain reserved by micronas. micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. by this publication, micronas does not assume respon- sibility for patent infringements or other rights of third parties which may result from its use. commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. all operating parameters must be validated for each customer application by customers? technical experts. any new issue of this document invalidates previous issues. micronas reserves the right to review this doc- ument and to make changes to the document?s content at any time without obligation to notify any person or entity of such revision or changes. for further advice please contact us directly. do not use our products in life-supporting systems, aviation and aerospace applications! unless explicitly agreed to otherwise in writing between the parties, micronas? products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applica- tions intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. no part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of micronas. micronas trademarks ?hal micronas patents sensor programming with vdd-modulation protected by micronas patent no. ep 0 953 848. choppered offset compensation protected by micronas patents no. us5260614, us5406202, ep0525235, and ep0548391. third-party trademarks all other brand and product names or company names may be trademarks of their respective companies.
contents page section title micronas nov. 26, 2008; dsh000149_003en 3 data sheet hal855 5 1. introduction 5 1.1. major applications 5 1.2. features 6 1.3. marking code 6 1.4. operating junction temperature range (t j ) 6 1.5. hall sensor package codes 6 1.6. solderability and welding 6 1.7. pin connections and short descriptions 7 2. functional description 7 2.1. general function 9 2.2. digital signal processing and eeprom 13 2.3. calibration procedure 13 2.3.1. general procedure 14 2.3.2. example: calibration of an angle sensor 16 3. specifications 16 3.1. outline dimensions 20 3.2. dimensions of sensitive area 20 3.3. position of sensitive areas 20 3.4. absolute maximum ratings 21 3.4.1. storage and shelf life 21 3.5. recommended operating conditions 22 3.6. characteristics 24 3.6.1. specification of biphase-m output 25 3.7. magnetic characteristics 26 3.8. diagnosis functions 27 4. application notes 27 4.1. use of two hal855 in parallel operation 27 4.2. measurement of a pwm output signal 28 4.3. measurement of a biphase-m output signal 28 4.4. temperature compensation 29 4.5. ambient temperature 30 4.6. emc and esd 30 4.7. start-up behavior 30 4.7.1. first operation (power-up) 31 4.7.2. operation after reset in biphase-m mode with provide part number option enabled 32 4.7.3. power-down operation 32 4.7.4. power drop operation 33 5. programming of the sensor 33 5.1. definition of programming telegram 33 5.2. definition of the telegram 37 5.3. telegram codes 38 5.4. number formats 38 5.5. register information 40 5.6. programming information
4 nov. 26, 2008; dsh000149_003en micronas contents, continued page section title hal855 data sheet 42 6. data sheet history
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 5 programmable linear hall-effect sensor with arbi- trary output characteristic release note: revision bars indicate significant changes to the previous edition. 1. introduction the hal855 is a member of the micronas family of programmable linear hall sensors. as an extension to the hal8x5 family, the hal855 offers an arbitrary out- put characteristic and individual programming of differ- ent sensors which are in parallel to the same supply voltage. the hal855 is an universal magnetic field sensor based on the hall effect. the ic is designed and pro- duced in sub-micron cmos technology and can be used for angle or distance measurements if combined with a rotating or moving magnet. the major charac- teristics like magnetic field range, output characteristic, output format, sensitivity, shift (offset), pwm period and the temperature coefficients are programmable in a non-volatile memory. the output characteristic can be set with 32 setpoints. the hal855 features a temperature-compensated hall plate with choppered offset compensation, an a/d-converter, digital signal processing, an eeprom memory with redundancy and lock function for the cali- bration data, a serial interface for programming the eeprom, and protection devices at all pins. the inter- nal digital signal processing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. the hal855 is programmable by means of modulat- ing the supply voltage. no additional programming pin is needed. the easy programmability allows a 2-point calibration by adjusting the output signal directly to the input signal (like mechanical angle, distance, or cur- rent). individual adjustment of each sensor during the customer?s manufacturing process is possible. with this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. this offers a low- cost alternative for all applications that presently need mechanical adjustment or laser trimming for calibrating the system. in addition, the temperature compensation of the hall ic can be fitted to all common magnetic materials, by programming first and second order temperature coef- ficients of the hall sensor sensitivity. this enables operation over the full temperature range with high accuracy. the calculation of the individual sensor characteristics and the programming of the eeprom memory can easily be done with a pc and the application kit from micronas. the sensors are designed for automotive or industrial applications. they operate with ambient tem- peratures from ? 40 c up to 150 c. the hal855 is available in the very small leaded package to92ut-1 and to92ut-2. 1.1. major applications due to the sensor?s versatile programming character- istics, the hal855 is the optimal system solution for applications such as: ? contactless potentiometers, ? rotary position measurement (e.g., pedal sensor), ? fluid level measurement, ? linear position detection, and ? magnetic field detection. 1.2. features ? high-precision linear hall effect sensors with differ- ent output formats ? various programmable magnetic characteristics with non-volatile memory ? programmable output characteristic (32 setpoints with 9-bit resolution) ? programmable output formats (pwm or serial biphase-m) ? programmable pwm period ? open-drain output ? digital signal processing ? temperature characteristics programmable for matching all common magnetic materials ? programming by modulation of the supply voltage ? lock function and built-in redundancy for eeprom memory ? operates from ?40 c up to 150 c ambient temper- ature ? operates from 4.5 v up to 18 v supply voltage ? operates with static magnetic fields and dynamic magnetic fields up to 2 khz ? choppered offset compensation ? overvoltage protection on all pins ? reverse-voltage protection on v dd pin ? magnetic characteristics extremely robust against mechanical stress ? short-circuit-protected output ? emc-optimized design ? programmable slew rate for optimized emi behavior
hal855 data sheet 6 nov. 26, 2008; dsh000149_003en micronas 1.3. marking code the hal855 has a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. 1.4. operating junction temperature range (t j ) the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). a: t j = ? 40 c to +170 c k: t j = ? 40 c to +140 c the relationship between ambient temperature (t a ) and junction temperature is explained in section 4.5. on page 29. 1.5. hall sensor package codes example: hal855ut-k type: 855 package: to92ut temperature range: t j = ? 40c to +140c hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ?micronas hall sen- sors: ordering codes, packaging, handling?. 1.6. solderability and welding soldering during soldering reflow processing and manual reworking, a component body temperature of 260c should not be exceeded. welding device terminals should be compatible with laser and resistance welding. please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. a very close control of the welding parameters is absolutely necessary in order to reach satisfying results. micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. pin connections and short descriptions fig. 1?1: pin configuration type temperature range a k hal855 855a 855k halxxxpa-t temperature range: a and k package: ut for to92ut-1/-2 type: 855 pin no. pin name type short description 1v dd in supply voltage and programming pin 2 gnd ground 3 out out open-drain output and selection pin 1 v dd 2gnd 3 out hal855
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 7 2. functional description 2.1. general function the hal855 is a monolithic integrated circuit which provides an output signal proportional to the magnetic flux through the hall plate. the external magnetic field component perpendicular to the branded side of the package generates a hall voltage. the hall ic is sensitive to magnetic north and south polarity. this voltage is converted to a digital value, processed in the digital signal processing unit (dsp) according to the settings of the eeprom regis- ters, converted to the different digital output formats (pwm and biphase-m serial protocol) and provided by an open-drain output transistor stage. the function and the parameters for the dsp are explained in section 2.2. on page 9. the setting of the lock register disables the program- ming of the eeprom memory for all time. this regis- ter cannot be reset. as long as the lock register is not set, the output characteristic can be adjusted by programming the eeprom registers. the ic is addressed by modulat- ing the supply voltage (see fig. 2?1). after detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. the output is switched off during the communication. when no command is detected or processed and the supply voltage is within the recommended operating range the pwm or biphase-m output is enabled. it is possible to program several sensors individually if they are in parallel to the same supply and ground line. the selection of each sensor is done via its output pin. internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and high offset stability. the circuitry also rejects offset shifts due to mechanical stress from the package. the non-volatile memory consists of redun- dant eeprom cells. in addition, the sensor ic is equipped with devices for overvoltage and reverse- voltage protection at all pins. fig. 2?1: programming with v dd modulation fig. 2?2: hal855 block diagram 5 6 7 8 v dd (v) hal 855 v dd gnd out v out (v) 0 v pull-up temperature oscillator switched a/d digital out v dd gnd eeprom memory bandgap reference dependent bias hall plate converter signal processing supply lock level control open-drain output hal855 detection
hal855 data sheet 8 nov. 26, 2008; dsh000149_003en micronas fig. 2?3: details of eeprom and digital signal processing mode register filter tc 6 bit tcsq 5 bit slope 14 bit shift 10 bit setpoints 32 x 9 bit micronas register customer settings 3 bit range 3 bit eeprom memory a/d converter digital filter multiplier adder get output conditioning digital signal processing digital output register 14 bit lock control between limits find interval limits lock 1 bit interpolate offset correction adder
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 9 2.2. digital signal processing and eeprom the dsp is the major part of this sensor and performs the signal conditioning. the parameters for the dsp are stored in the eeprom registers. the details are shown in fig. 2?3 on page 8. terminology: slope: name of the register or register value slope: name of the parameter the eeprom registers consist of three groups: group 1 contains the registers for the adaption of the sensor to the magnetic system: mode for selecting the magnetic field range and filter frequency, tc and tcsq for the temperature characteristics of the mag- netic sensitivity. the parameters slope and shift are used for the individual calibration of the sensor in the magnetic cir- ucit. ? the parameter shift corresponds to the output sig- nal at b = 0 mt. ? the parameter slope defines the magnetic sensitiv- ity. group 2 contains the registers for defining the output characteristics: output format, output period or output bittime, slew rate and output characteristic. the shape of the output signal is determined by the output characteristic, which, in turn, is defined by the 32 setpoints of the sensor. a value for each of the set- points must be defined. the setpoints are distributed evenly along the magnetic field axis allowing linear interpolation between the 32 setpoints (see fig. 2?4). group 3 contains the partnumber, the micronas registers, and lock for the locking of all registers. after locking, the partnumber register is only avail- able in biphase-m output mode. the micronas regis- ters are programmed and locked during production and are read-only for the customer. these registers are used for oscillator frequency trimming and several other special settings. an external magnetic field generates a hall voltage on the hall plate. the a/d-converter converts the ampli- fied positive or negative hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. the digital signal is filtered in the internal low-pass filter and manipulated according to the settings stored in the eeprom. the digital value after signal processing is readable in the digital output register. depending on the pro- grammable magnetic range of the hall ic, the operating range of the a/d converter is from ? 30 mt ... +30 mt up to ? 150 mt... +150 mt. during further processing, the digital signal is calcu- lated based on the values of slope, shift, and the defined output characteristic. the result is converted to the different digital output formats (pwm and biphase-m) and stabilized by a open-drain output tran- sistor stage. the digital output value at any given magnetic field depends on the settings of the magnetic field range, the low-pass filter, tc, tcsq values and the programmed output characteristic. the digital output range is min. 0 to max. 4095. note: during application design, it should be taken into consideration that digital output should not saturate in the operational range of the specific application. % setpoint pwm hal 855 0 4 8 121620242832 0 10 20 30 40 50 60 70 80 90 100 lo gar ithmic s ine linear logarithmic sine linear fig. 2?4: example for different output characteristics
hal855 data sheet 10 nov. 26, 2008; dsh000149_003en micronas mode the mode register consists of four ?sub?-registers defining the magnetic and output behavior of the sen- sor. the range bits are the three lowest bits of the mode register; they define the magnetic field range of the a/d converter. the next three bits (filter) define the ? 3 db frequency of the digital low pass filter. the next sub-register is the format register, and it defines the different output formats as described below. this sub-register also consists of 3 bits. the last three msbs define the output period of the pwm signal. range filter output format the hal855 provides two different output formats: a pwm and biphase-m output. pmw output is a pulse width modulated output. the signal is defined by the ratio of pulse width to pulse period. the biphase-m output is a serial protocol. a logical ?0? is coded as no output level change within the bit time. a logical ?1? is coded as an output level change between 50% and 80% of the bit time. after each bit, an output level change occurs (see section 3.6.1. on page 24). output period the output period register defines the pwm period of the output signal. table 2?1: range register definition magnetic field range bit setting ? 30 mt...30 mt 0 ? 40 mt...40 mt 4 ? 60 mt...60 mt 5 ? 75 mt...75 mt 1 ? 80 mt...80 mt 6 ? 90 mt...90 mt 2 ? 100 mt...100 mt 7 ? 150 mt...150 mt 3 table 2?2: filter register definition ? 3 db frequency bit setting 80 hz 0 160 hz 1 500 hz 2 1khz 3 2khz 4 table 2?3: output format register definition output format bit setting pwm 2 biphase-m 4 1) biphase-m (test) 5 2) 1) in case of output format = 4 the continuous biphase-m output will be active after locking the device. in order to test the biphase-m output with non-locked sensors output format = 5 has to be used. 2) writing output format = 5 will activate the biphase-m output for test purpose. the test can be deactivated by switching the device off. table 2?4: output period register definition pwm output period bit setting 128 ms; 12-bit resolution 0 64 ms; 12-bit resolution 1 32 ms; 12-bit resolution 2 16 ms; 12-bit resolution 3 8 ms; 12-bit resolution 4 4 ms; 11-bit resolution 5 2 ms; 10-bit resolution 6 1 ms; 9-bit resolution 7
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 11 output bittime the output bittime register defines the bit time of the biphase-m output signal. output bittime is ?sub?-register of the special customer register. note: setting the biphase-m bit time to 40 s simulta- neously switches the programming telegram to the same bit time. hence after writing the output bittime register the timing of the pro- gramming device has to be set accordingly. tc and tcsq the temperature dependence of the magnetic sensitiv- ity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. the adaption is done by programming the tc (linear temperature coefficient) and the tcsq registers (quadratic temperature coef- ficient). thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assem- bly. as a result, the output signal characteristic can be fixed over the full temperature range. the sensor can compensate for linear temperature coefficients ranging from about ? 2100 ppm/k up to 600 ppm/k and qua- dratic coefficients from about ? 5ppm/k 2 to 5 ppm/k 2 . please refer to section 4.4. on page 28 for the recom- mended settings for different linear temperature coeffi- cients. slope the slope register contains the parameter for the multiplier in the dsp. the slope is programmable between ? 4 and 4. the register can be changed in steps of 0.00049. slope = 1 corresponds to an increase of the output signal by 100% if the digital value at the a/d-converter output increases by 2048. for all calculations, the digital value after the digital signal processing is used. this digital information is readable from the digital output register. shift the shift register contains the parameter for the adder in the dsp. shift is the output signal without external magnetic field (b = 0 mt) and programmable from ? 100% up to 100%. for calibration in the system environment, a 2-point adjustment procedure is rec- ommended. the suitable slope and shift values for each sensor can be calculated individually by this pro- cedure. part number in case of biphase-m output, a part number can be defined. this part number will be sent during power-on of the sensor if the partnumber enable bit is set. afterwards, the sensor will send the digital value corre- sponding to the applied magnetic field. ? the partnumber enable bit is part of the special customer register. ? the output period register defines the time interval for which the part number is sent. output characteristic the output characteristic register defines the shape of the sensor output signal. it consists of 32 setpoints. each setpoint can be set to values between 0 and 511 lsb. the output characteristic has to be monotonic increasing (setpoint0 setpoint1 setpointn). lockr by setting this 1-bit register, all registers will be locked, and the sensor will no longer respond to any supply voltage modulation. this bit is active after the first power-off and power-on sequence after setting the lock bit. warning: this register cannot be reset! table 2?5: output bittime register definition biphase-m output bit time bit setting 40 s0 84 s 1 168 s 2 320 s 3 700 s 11 1.6 ms 4 3.2 ms 5 6.4 ms 7
hal855 data sheet 12 nov. 26, 2008; dsh000149_003en micronas digital output this 12-bit register delivers the actual digital value of the applied magnetic field after the signal processing. this register can only be read out, and it is the basis for the calibration procedure of the sensor in the sys- tem environment. offset correction the offset correction register allows to adjust the digital offset of the built-in a/d-converter. the digi- tal offset can be programmed to ? 3/4, ? 1/2, ? 1/4, 0, +1/4, +1/2, +3/4 of full-scale. slew rate the slew rate register is a ?sub?-register of the currentsource register. the output fall time of the hal855 depends on the slew rate register set- ting and the external load circuit. note: the output rise time is purely due to the external load and is not controlled by the slew rate register. note: the slew rate can be programmed to optimize the emi behavior of the application. table 2?6: offset correction register definition offset correction bit setting ? 3/4 28 ? 1/2 29 ? 1/4 30 00 1/4 17 1/2 18 3/4 19 table 2?7: slew rate register definition typ. slew rate (3.6 k pull-up, 4.7 nf) bit setting 0.3 s 0 0.8 s 1 1.2 s 2 1.5 s 3
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 13 2.3. calibration procedure 2.3.1. general procedure for calibration in the system environment, the applica- tion kit from micronas is recommended. it contains the hardware for the generation of the serial telegram for programming (programmer board version 5.1) and the corresponding software (pc85x) for the input of the register values. for the individual calibration of each sensor in the cus- tomer application, a two-point adjustment is recom- mended (see fig. 2?5 on page 14 for an example). the calibration shall be done as follows: step 1: input of the registers which need not be adjusted individually the magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, the part number and the output format are given for this application. therefore, the values of the following registers should be identical for all sensors of the customer application. ?filter (according to the maximum signal frequency) ?range (according to the maximum magnetic field at the sensor position) ? tc and tcsq (depends on the material of the magnet and the other temperature dependencies of the application) ? output format (according to the application requirements) ? output period (according to the application requirements) ? partnumber (in case biphase-m output format is used) ? offset correction ?slew rate write the appropriate settings into the hal855 regis- ters. step 2: initialize dsp as the digital output register value depends on the settings of slope, shift and the output characteristic, these registers have to be initial- ized with defined values, first: ?shift initial = 50% ? output characteristic = ?linear standard? (setpoint 0 = 0, setpoint 1 = 16, setpoint 2 = 32, ..., setpoint 31 = 496). ? slope initial depends on the setting of the digital low-pass filter (see table 2?8). step 3: define calibration points for highest accuracy of the sensor, calibration points near the minimum and maximum input signal are rec- ommended. define nominal values dout1 nom and dout2 nom of the digital output register at the calibration points 1 and 2, respectively. note: micronas software pc85x uses default settings dout1 nom = 0 and dout2 nom = 3968. the output is clamped to setpoint 0 and setpoint 31. in the case of ?linear standard??, setpoint 0 corresponds to digital output = 0, while setpoint 31 corresponds to digital output = 3968. table 2?8: initial slope values ? 3 db frequency slope initial 80 0.2578 160 0.2578 500 0.1938 1000 0.1938 2000 0.3398
hal855 data sheet 14 nov. 26, 2008; dsh000149_003en micronas step 4: calculation of shift and slope set the system to calibration point 1 and read the register digital output. the result is the value dout1. now, set the system to calibration point 2, read the register digital output, and get the value dout2. with these values, the settings for sensitivity and shift are calculated as: write the calculated values for slope, shift, and the desired output characteristic into the eeprom. the sensor is now calibrated for the customer application. as long as the lock bit is not set, the calibration pro- cedure can be applied repeatedly. note: for a recalibration, the calibration procedure has to be started at the beginning (step 1). a new initialization is necessary, as the initial values for slope initial , shift initial and output characteristic are overwritten in step 4. step 5: locking the sensor the last step is activating the lock function with the ?lock? command. please note that the lock function becomes effective after power-down and power-up of the hall ic. the sensor is now locked and does not respond to any programming or reading commands. warning: this register cannot be reset! 2.3.2. example: calibration of an angle sensor the following description explains the calibration pro- cedure using an angle sensor with a hal855 as an example. the required output characteristic is shown in fig. 2?5. ? the angle range is from ? 25 to 25 ? temperature coefficient of the magnet: ? 500 ppm/k slope slope initial dout 2 nom dout 1 nom ? () dout 2 dout 1? () -------------------------------------------------------------------------- - = shift 100% 4096 ------------- - dout 2 nom dout 22048 ? () slope slope initial ---------------------------------------------------------------- ? ?? ?? = % angle hal 855 -30 -20 -10 0 10 20 30 0 10 20 30 40 50 60 70 80 90 100 s ine linear output duty cycle sine linear first calibration point second calibration point fig. 2?5: example for output characteristics
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 15 step 1: input of the registers which need not be adjusted individually the register values for the following registers are given for all applications: ?filter select the filter frequency: 500 hz ?range select the magnetic field range: 40 mt ?tc for this magnetic material: 6 ?tcsq for this magnetic material: 14 ? output format select the output format: pwm ? output period select the output format: 8 ms ? partnumber for this example: 1 ? offset correction for this example: none ?slew rate for this example: 0 (fastest) enter these values in the software, and use the ?write and store? command for permanently writing the val- ues in the registers. step 2: initialize dsp ?shift select shift: 50% ?slope select slope: 0.1938 (see table 2?8 on page 13) ? output characteristic select output characteristic: ?linear standard? step 3: define calibration points the micronas software pc85x uses default settings dout1 nom = 0 and dout2 nom = 3968. dout1 nom corresponds to the angle position ? 25, dout2 nom to +25. step 4: calculation of shift and slope there are two ways to calculate the values for shift and slope. manual calculation: 1. set the system to calibration point 1 (angle 1 = 25) 2. read the register digital output. for our example, the result is digital output = dout1 = 3291. 3. set the system to calibration point 2 (angle 2 = ? 25) 4. read the register digital output again. for our example, the result is digital output = dout2 = 985. with these measurements and the pre-programming of the sensor, the values for slope and shift are calcu- lated as: write the calculated values for slope and shift and a linear output characteristic ranging from 10% to 90% output duty cycle into the eeprom memory. software calibration: use the menu calibrate from the pc software and enter the values for the registers which are not adjusted individually. set the system to calibration point 1 (angle 1 = 25), hit the button ?digital output1?, set the system to calibration point 2 (angle 2 = ? 25), hit the button ?digital output2?, and hit the button ?cal- culate?. the software will then calculate the appropri- ate shift and slope. this calculation has to be done individually for each sensor. now, select an output characteristic from the selection box ?output characteristics? and then press the button ?write and store? for programming the sensor. step 5: locking the sensor the last step is activating the lock function with the ?lock? command. please note that the lock function becomes effective after power-down and power-up of the hall ic. the sensor is now locked and does not respond to any programming or reading commands. warning: this register cannot be reset! slope 3968 985 3291 ? () ------------------------------- 0.1938 0.3335 ?= = shift 100% 4096 ------------- - 3968 985 2048 ? () 0.3335 ? () 0.1938 -------------------------------------------------------------- ? ?? ?? 52.22% ==
hal855 data sheet 16 nov. 26, 2008; dsh000149_003en micronas 3. specifications 3.1. outline dimensions fig. 3?1: to92ut-2 : plastic transistor standard ut package, 3 leads, not spread weight approximately 0.12 g
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 17 fig. 3?2: to92ut-1 : plastic transistor standard ut package, 3 leads, spread weight approximately 0.12 g
hal855 data sheet 18 nov. 26, 2008; dsh000149_003en micronas fig. 3?3: to92ut-2 : dimensions ammopack inline, not spread
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 19 fig. 3?4: to92ut-1 : dimensions ammopack inline, spread
hal855 data sheet 20 nov. 26, 2008; dsh000149_003en micronas 3.2. dimensions of sensitive area 0.25 mm x 0.25 mm 3.3. position of sensitive areas 3.4. absolute maximum ratings stresses beyond those listed in the ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these conditions is not implied. exposure to absolute maximum rating conditions for extended periods will affect device reliability. this device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso- lute maximum-rated voltages to this high-impedance circuit. all voltages listed are referenced to ground (gnd). to92ut-1/-2 y 1.5 mm nominal a4 0.3 mm nominal bd 0.3 mm symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 14.5 1) 18 v ? i dd reverse supply current 1 ? 50 2) ma i z current through protection device 1 or 3 ? 50 2) 50 2) ma v out output voltage 3 ? 0.3 >14 4) 14 18 4) v v i out continuous output current 3 ? 50 2) 50 2) ma t j junction temperature range ? 40 ? 40 150 170 3) c n prog number of programming cycles ? 100 1) t < 1 min. 2) as long as t jmax is not exceeded 3) t < 1000h 4) t < 100h
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 21 3.4.1. storage and shelf life the permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 c and a maximum of 85% relative humidity. at these conditions, no dry pack is required. solderability is guaranteed for one year from the date code on the package. 3.5. recommended operating conditions functional operation of the device beyond those indicated in the ?recommended operating conditions/characteris- tics? is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime. all voltages listed are referenced to ground (gnd). note: please contact micronas application support or check available application notes in case of usage of the sen- sor beyond recommended operating conditions. symbol parameter pin no. min. typ. max. unit remarks v dd supply voltage 1 4.5 5 5.5 v v dd battery supply voltage 1 8 6 12 12 18 18 vt j >125c, r p = 120 t j <125c, r p = 120 v pull-up output pull-up voltage 3 3 5 12 v i out continuous output current 3 ?? 20 ma c p protection capacitance 1,2 4.7 4.7 1000 nf c l load capacitance 2,3 0.33 4.7 100 nf
hal855 data sheet 22 nov. 26, 2008; dsh000149_003en micronas 3.6. characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 14 v, after programming and locking of the device, at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v dd = 5 v. all voltages listed are referenced to ground (gnd). symbol parameter pin no. min. typ. max. unit conditions i dd supply current over temperature range 1 ? ? 7 7 8 10 ma ma t j > 125c t j < 125c i oh output leakage current over temperature range 3 ?? 10 a v ddz overvoltage protection at supply 1 ? 22 ? v v oz overvoltage protection at output 3 ? 22 ? v resolution 2,3 ?? 12 bit 1) inl integral non-linearity over temperature range 2,3 ? 0.5 0 0.5 % 2) f pwm pwm output frequency over temperature range 3 920 460 230 115 57 28 13 6.5 1000 500 250 125 62.5 31 15 7.5 1080 540 270 135 68 34 17 8.5 hz hz hz hz hz hz hz hz pwm period: 1 ms; 9 bit res. pwm period: 2 ms; 10 bit res. pwm period: 4 ms; 11 bit res. pwm period: 8 ms; 12 bit res. pwm period: 16 ms; 12 bit res. pwm period: 32 ms; 12 bit res. pwm period: 64 ms; 12 bit res. pwm period: 128 ms;12 bit res. t p0 biphase-m output bittime over temperature range 30.03 2 0.04 3.2 0.05 4 ms ms biphase-m bit time: 40 s biphase-m bit time: 3.2 ms t p1 biphase-m output timing for logical 1 3 506580% f adc internal adc frequency over temperature range ? 110 128 150 khz v dd = 4.5 v to 14 v t r(o) response time of internal signal 3) 3 ? ? ? 5 4 2 1 10 8 4 2 ms ms ms ms 3 db filter frequency = 80 hz 3 db filter frequency = 160 hz 3 db filter frequency = 500 hz 3 db filter frequency = 2 khz t d(o) delay time of internal signal 3 ? 0.1 0.5 ms t pod power-up time (time to reach stabilized internal signal) 3) ? ? ? 6 5 3 2 11 9 5 3 ms ms ms ms 3 db filter frequency = 80 hz 3 db filter frequency = 160 hz 3 db filter frequency = 500 hz 3 db filter frequency = 2 khz 1) if the hall ic is programmed suitably 2) if more than 50% of the selected magnetic field range are used and the hall ic is programmed suitably 3) the output signal is updated at the begin of each pwm period or biphase-m period. the update time depends on the output format settings.
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 23 t lvd power-down time (time until output is off) 50 75 s v lvd power-down voltage 1 ? 3.5 ? v v pod power-on reset voltage 1 ? 3.6 ? v bw small signal bandwidth (? 3db) 3 ? 2 ? khz b ac < 10 mt; 3 db filter frequency = 2 khz r ds,on ?on? resistance r ds of output transistor 3 ? 50 100 to92ut packages r thja r thjc r thjs thermal resistance junction to air junction to case junction to solder point ? ? ? ? ? ? ? ? ? 235 61 128 k/w k/w k/w measured with a 1s0p board measured with a 1s0p board measured with a 1s1p board symbol parameter pin no. min. typ. max. unit conditions
hal855 data sheet 24 nov. 26, 2008; dsh000149_003en micronas 3.6.1. specification of biphase-m output in case of output format biphase-m, a continuous data stream is provided. it consists of: ? 1 sync bit defining the bit time t p0 , ? 14 data bits (dat) ? 1 parity bit (dp) ? a gap (signal quiescent) of 8 x t p0 the complete signal period is t = 24 x t p0 . the signal quiescent level and the polarity of the sync bit is shown in fig. 3?5. definition of biphase-m pulses a logical ?0? is coded as no output level change within the bit time. a logical ?1? is coded as an output level change between 50% and 80% of the bit time. after each bit, an output level change occurs. data bits (dat) the 12 msb of the 14 data bits (dat) contain the digi- tal output reading. data parity bit (dp) this parity bit is ?1? if the number of zeros within the 14 data bits is even. the parity bit is ?0? if the number of zeros is odd. note: if the part number output is activated the part number will be transmitted 2 times after power-up (see also (see fig. 4?6 on page 31). the first biphase-m protocol respectively the first pwm period after power-up is not valid. fig. 3?5: output format biphase-m: continuous data stream type sync bit polarity hal855 negative dat dp sync bit hal855: v out 8 x t p0
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 25 3.7. magnetic characteristics at t j = ? 40 c to +170 c, v dd = 4.5 v to 14 v, after programming and locking of the device, at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v dd = 5 v. definition of sensitivity errors over temperature a ideal hall-effect device would not be affected by temperature. its temperature compensation would allow to compensate for a linear temperature coeffi- cient ideal of a permanent magnet. the temperature dependence of the sensitivity of a real sensor is not ideally linear. its linear temperature coefficient is determined by a linear least square fit. micronas specifies two sensitivity errors over temperature: 1. the error of the linear temperature coefficient : 2. the maximum residual error over temperature resulting from the least square fit, i.e., the integral non-linearity of the temperature dependence of sen- sitivity: symbol parameter pin no. min. typ. max. unit conditions b offset magnetic offset 3 ? 10 1 mtb = 0mt, t j = 25 c b offset / t magnetic offset change due to t j ? 15 0 15 t/k b = 0 mt ? error of linear temperature coefficient of magnetic sensitivity ? 400 0 400 ppm/k tc and tcsq suitable for the application nl sb(t) integral non-linearity of temperature dependence of sensitivity ? ? 1 2 ? ? % % < 2000 ppm/k >= 2000 ppm/k tc and tcsq suitable for the application b hysteresis magnetic hysteresis ? 20 0 20 t range = 30 mt, filter = 500 hz s 0 and are the fit parameters, res(t) the residual error. s ideal 1 ideal tt 0 ? () += s b s 0 1 tt 0 ? () res t () ++ () = ? ideal ?= nl sb t () max t res t () =
hal855 data sheet 26 nov. 26, 2008; dsh000149_003en micronas 3.8. diagnosis functions the hal855 features various diagnosis functions, such as undervoltage detection and open-circuit detection. a description of the sensor?s behavior is shown in the table below (typical characteristics for t j = 25 c). note: the undervoltage detection is activated only after locking the sensor! parameter min. typ. max. unit output behavior undervoltage detection level v dd, uv 3.0 3.5 4.0 v no pwm output signal (output on high-level) open v dd line ???? no pwm output signal (output on high-level) open gnd line ???? no pwm output signal
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 27 4. application notes micronas recommends the following application cir- cuits for hal855. the first is recommended for appli- cations with connection to a regualted 5 v supply; the second schould be used for applications connected dicrectly to the car battery and a pull-up to a 5 v line. for both circuits, it is recommended to connect a ceramic 4.7 nf capacitor between ground and the sup- ply voltage, respectively, the output pin. fig. 4?1: application circuit hal855 fig. 4?2: application circuit hal855 for connection with car battery 4.1. use of two hal855 in parallel operation two different hal855 sensors which are operated in parallel to the same supply and ground line can be programmed individually. in order to select the ic which should be programmed, both hall ics are deac- tivated by the ?deactivate? command on the common supply line. then, the appropriate ic is activated by an ?activate? pulse on its output. only the activated sen- sor will react to all following read, write, and program commands. if the second ic has to be programmed, the ?deactivate? command is sent again, and the sec- ond ic can be selected. detailed information can be found in the application note for the programmer board. fig. 4?3: parallel operation of two hal855 4.2. measurement of a pwm output signal in case that the pwm output mode is activated, the magnetic field information is coded in the duty cycle of the pwm signal. the duty cycle is defined as the ratio between the high time ?s? and the period ?d? of the pwm signal (see fig. 4?4). note: the pwm signal is updated with the falling edge. hence, for signal evaluation, the trigger- level must be the falling edge of the pwm sig- nal. fig. 4?4: definition of pwm signal c p = 4.7 nf 1 2 3 v dd gnd v supply = 5 v 0.5 v r pull-up system side sensor side c l = 4.7 nf out c p = 4.7 nf 1 2 3 v dd gnd r pull-up system side sensor side c l = 4.7 nf out v supply = 8 v...18 v v pull-up = 5 v 0.5 v r p = 120 hal855 gnd 10 nf hal855 4.7 nf 4.7 nf sensor a sensor b v dd out b & select b out a & select a update out time v high v low d s
hal855 data sheet 28 nov. 26, 2008; dsh000149_003en micronas 4.3. measurement of a biphase-m output signal in order to read the biphase-m signal micronas sug- gests to use a port interrupt which is configured to gen- erate interrupts with both the falling and rising edge of the incoming signal. with each interrupt a timer shall be read out. the first two edges (sync bit) define the bit time t p0 . compar- ing subsequent timer readouts with t p0 successively decodes the biphase-m pattern. 4.4. temperature compensation the relationship between the temperature coefficient of the magnet and the corresponding tc and tcsq codes for linear compensation is given in the following table. in addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. for this purpose, other tc and tcsq combi- nations are required which are not shown in the table. micronas also offers a software named tc-calc to optimize the tc and tcsq values for each individual application based on customer measurement results. please contact micronas for more detailed information. table 4?1: temperature compensation typ. temperature coefficient of magnet (ppm/k) tc tcsq 600 31 0 570 30 0 540 29 0 520 28 0 490 27 0 470 26 0 440 25 0 420 24 0 360 23 1 330 22 1 300 21 1 280 20 1 260 19 1 240 18 1 200 17 1 180 16 1 150 15 1 130 14 1 60 13 2 40 12 2 10 11 2 ? 20 10 2 ? 50 9 2 ? 70 8 2 ? 100 7 3 ? 180 6 3 ? 200 5 3 ? 230 4 3 ? 260 3 3 ? 280 2 4 ? 360 1 4 ? 390 0 4 ? 410 ? 31 4 ? 490 ? 30 5 ? 510 ? 29 5 ? 540 ? 28 5 ? 610 ? 27 6 ? 640 ? 26 6 ? 670 ? 25 6 ? 740 ? 24 7 ? 780 ? 23 7 ? 840 ? 22 8 ? 880 ? 21 8 ? 950 ? 20 9 ? 980 ? 19 9 ? 1010 ? 18 9 table 4?1: temperature compensation, continued typ. temperature coefficient of magnet (ppm/k) tc tcsq
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 29 4.5. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). at static conditions and continuous operation, the fol- lowing equation applies: for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. example with typical given values: i dd =0.007a v dd =5v r thja = 235 k/w t jmax = 170 the current through the output is calculated as follows: v pull-up = 5 v r pull-up = 470 r ds,on =50 t is calculated as follows: the maximum ambient temperature t amax can be calculated as: ? 1080 ? 17 10 ? 1150 ? 16 11 ? 1180 ? 15 11 ? 1270 ? 14 12 ? 1290 ? 13 12 ? 1360 ? 12 13 ? 1430 ? 11 14 ? 1460 ? 10 14 ? 1540 ? 915 ? 1600 ? 816 ? 1670 ? 717 ? 1740 ? 618 ? 1810 ? 519 ? 1880 ? 420 ? 1950 ? 321 ? 2020 ? 222 ? 2100 ? 123 table 4?1: temperature compensation, continued typ. temperature coefficient of magnet (ppm/k) tc tcsq t j t a t += t i dd v dd r thjx i out v outlow r thjx + = i out v pull up ? r pull up ? r + ds on , --------------------------------------------- - 5 v 520 ------------- 0.01 a = = v outlow i out r ds on , 0.01 a 50 ? 0.5 v === t 0.007 a 5 v 235 k w ---- - 0.01 + a 0. 5 v 235 k w ---- - 9.4 = = t amax t jmax t ?=
hal855 data sheet 30 nov. 26, 2008; dsh000149_003en micronas 4.6. emc and esd for applications with disturbances by capacitive or inductive coupling on the supply line or radiated distur- bances, the application circuits shown in fig. 4?1 on page 27 are recommended. applications with this arrangement should pass the emc tests according to the product standards iso 7637 part 1 to part 3. please contact micronas for the detailed investigation reports with the emc and esd results. note: micronas recommends to supply the hal855 with a stabilized 5 v supply. 4.7. start-up behavior 4.7.1. first operation (power-up) fig. 4?5: power-up diagram note: the first pwm-period respectively the first biphase-m protocol is not valid. first pwm/biphase-m signal starts time v out (3-wire mode) v dd 5 v t pod output undefined output undefined biphase-m pwm format format time no valid signal valid signal the first period contains no valid data 3 v v dd,uvmin.
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 31 4.7.2. operation after reset in biphase-m mode with provide part number option enabled fig. 4?6: biphase-m after reset note: the part number is transmitted twice. the transmission time depends on the chosen bit time, but is max. 100 ms. part number max. 100 ms data first signal starts no valid signal valid signal time output v dd 5 v t pod
hal855 data sheet 32 nov. 26, 2008; dsh000149_003en micronas 4.7.3. power-down operation fig. 4?7: power-down operation 4.7.4. power drop operation fig. 4?8: power-drop operation last pwm/biphase-m signal starts time v out (3-wire mode) 5 v t lvd output undefined output undefined biphase-m pwm format format valid signal no valid signal v dd,uv pwm/biphase-m signal stops time v out (3-wire mode) v dd 5 v t lvd output undefined output undefined biphase-m pwm format format valid signal no valid signal v dd 5 v new pwm/biphase-m signal starts t pod low voltage on power-on reset valid signal the first period contains no valid data
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 33 5. programming of the sensor 5.1. definition of programming telegram the sensor is addressed by modulating a serial tele- gram on the supply voltage. the sensor answers with a serial telegram on the output pin. the bits in the serial telegram have a different bit time for the v dd -line and the sensors answer. the bit time for the v dd -line is defined through the length of the sync bit at the beginning of each telegram. the bit time for the sensors answer is defined through the acknowledge bit. a logical ?0? is coded as no output level change within the bit time. a logical ?1? is coded as an output level change between 50% and 80% of the bit time. after each bit, an output level change occurs. 5.2. definition of the telegram each telegram starts with the sync bit (logical 0), 3 bits for the command (com), the command parity bit (cp), 4 bits for the address (adr), and the address parity bit (ap). there are 4 kinds of telegrams: ? write a register (see fig. 5?2 on page 35) after the ap bit, follow 14 data bits (dat) and the data parity bit (dp). if the telegram is valid and the command has been processed, the sensor answers with an acknowledge bit (logical 0) on the output. note: the sensor can only be programmed with pro- grammer board version 5.1. if you have an older version, please contact micronas or your sup- plier. ? read a register (see fig. 5?3 on page 35) after evaluating this command, the sensor answers with the acknowledge bit, 14 data bits, and the data parity bit on the output. ? programming the eeprom cells in order to permanently store the written data into the eeprom cells, an erase and program com- mand have to be sent to the sensor. after the recog- nition of the erase and program commands, the hal855 answers with an acknowledge pulse on its output signal. after the acknowledge pulse, a pulse on the v dd -line is created to start the charging of the eeprom cells. then, the supply voltage is kept constant during the charging time. to stop the charging, a further command is sent to the hal855. this stopping command can be a further program- ming command or a read command (see fig. 5?5 on page 36). ? lock a sensor to lock the eeprom registers, the lock bit has to be programmed. write the lock bit into the lock register. if the telegram is valid and the command has been processed, the sensor answers with an acknowl- edge bit (logical 0) on the output. in order to store the lock bit permanently, an erase and program command have to be sent to the sensor. the same procedure as mentioned above (programming the eeprom cells fig. 5?5 on page 36). the eeprom registers are locked after a power on reset. note: it is mandatory to lock the sensor before per- forming any kind of reliability tests or after the last programming of the sensor. the hal855 has its full performance only after setting the lock bit. ? activate a sensor (see fig. 5?4 on page 35) if more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. with an activate pulse on the appropriate output pin, an individual sensor can be selected. all following commands will only be accepted from the activated sensor. fig. 5?1: definition of logical 0 and 1 bit t r t f t p0 t p0 logical 0 high-level low-level or t p0 logical 1 high-level low-level or t p0 t p1 t p1
hal855 data sheet 34 nov. 26, 2008; dsh000149_003en micronas table 5?1: telegram parameters (all voltages are referenced to gnd.) symbol parameter pin no. min. typ. max. unit conditions v ddl supply voltage for low level during programming 155.56v v ddh supply voltage for high level during programming 1 6.8 8.0 8.5 v t r rise time 1 ?? 0.05 ms t f fall time 1 ?? 0.05 ms t p0 bit time on v dd 1 1.7 1.75 1.8 ms t p0 is defined through the sync bit t pout bit time on output pin 3 2 3 4 ms t pout is defined through the acknowledge bit t p1 voltage change for logical 1 1, 3 50 65 80 % % of t p0 or t pout t prog programming time for eeprom 1 95 100 105 ms v dd,prog supply voltage during programming 1 4.9 5 5.1 v t rp rise time of charging pulse 1 0.2 0.5 1 ms t fp fall time of charging pulse 1 0 ? 1ms t w delay time of charging pulse after acknowledge 10.50.71ms v act voltage for an activate pulse 3 0 0 0.5 v t act duration of an activate pulse 3 0.05 0.1 ? ms
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 35 fig. 5?2: telegram for coding a write command fig. 5?3: telegram for coding a read command fig. 5?4: activate pulse sync com cp adr ap dat dp v dd write v out sync com cp adr ap dat dp acknowledge v dd read v out t act v out t f t r v act
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 36 fig. 5?5: telegram for programming the eeprom sync com1 cp1 adr1 ap1 acknowledge v dd store sync com2 cp2 adr2 ap2 sync com3 cp3 adr3 ap3 dat dp acknowledge v dd 2 x delay time programming time = 100 ms detail a a v out v out erase sequence prom read start the charge pump stop the charge pump
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 37 5.3. telegram codes sync bit each telegram starts with the sync bit. this logical ?0? pulse defines the exact timing for t p0 . command bits (com) the command code contains 3 bits and is a binary number. table 5?2 shows the available commands and the corresponding codes for the hal855. command parity bit (cp) this parity bit is ?1? if the number of zeros within the 3 command bits is odd. the parity bit is ?0?, if the num- ber of zeros is even. address bits (adr) the address code contains 4 bits and is a binary num- ber. (see table 5?3 on page 39) shows the available addresses for the hal855 registers. address parity bit (ap) this parity bit is ?1? if the number of zeros within the 4 address bits is odd. the parity bit is ?0? if the number of zeroes is even. data bits (dat) the 14 data bits contain the register information. the registers use different number formats for the data bits. these formats are explained in section 5.4. on page 38 in the write command, the last bits are valid. if, for example, the tc register (7 bits) is written, only the last 7 bits are valid. in the read command, the first bits are valid. if, for example, the tc register (7 bits) is read, only the first 6 bits are valid. data parity bit (dp) this parity bit is ?1? if the number of zeros within the binary number is even. the parity bit is ?0? if the num- ber of zeros is odd. acknowledge after each telegram, the output answers with the acknowledge signal. this logical ?0? pulse defines the exact timing for t pout . table 5?2: available commands command code explanation read 0 read a setup eeprom register (like tc, tcsq, magnetic range, etc.) readl 6 read a characteristics eeprom register (setpoints 0 to 15) readh 7 read a characteristics eeprom register (setpoints 16 to 31) write 3 write a setup eeprom register (like tc, tcsq, magnetic range, etc.) writel 1 write a characteristics eeprom register (setpoints 0 to 15) writeh 2 write a characteristics eeprom register (setpoints 16 to 31) prom 4 program all non-volatile registers erase 5 erase all non-volatile registers please note: the lock bit is set by using the write command followed by a prom.
hal855 data sheet 38 nov. 26, 2008; dsh000149_003en micronas 5.4. number formats binary number: the most significant bit is given as first, the least sig- nificant bit as last digit. example: 101001 represents 41 decimal. signed binary number: the first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). example: 0101001 represents +41 decimal 1101001 represents ? 41 decimal two?s-complementary number: the first digit of positive numbers is ?0?, the rest of the number is a binary number. negative numbers start with ?1?. in order to calculate the absolute value of the number, calculate the complement of the remaining digits and add ?1?. example: 0101001 represents +41 decimal 1010111 represents ? 41 decimal 5.5. register information currentsource ? the register range is from 0 to 1023 and contains the settings for low current, high current, and slew rate: partnumber ? the register range is from 0 up to 2047. shift ? the register range is from ? 1024 up to 1023. ? the register value is calculated by: slope ? the register range is from ? 8192 up to 8191. ? the register value is calculated by: tc and tcsq ? the tc register range is from ? 31 up to 31. ? the tcsq register range is from 0 up to 31. note: the word length tc register is 7 bit. the 6 lsbs represent a signed binary number. the msb has to be ignored. mode ? the register range is from 0 up to 16383 and con- tains the settings for period, format, filter, and range: please refer to the data sheet for the available period, format, filter, and range values. digital-readout ? this register is read only. ? the register range is from 0 up to 4095. offset correction ? the register range is from 0 to 31 ? the msb is set to activate the offset correction. currentsource slew rate 256 low current + 8 high current + = shift shift 100% ------------- - 1024 = slope slope 2048 = mode period =512 format 64 filter 8 range + + +
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 39 special customer ? the register range is from 0 to 63 and contains the settings for output bittime and partnumber enable: note: when output format pwm is used the default values for the partnumber enable bit must not be modified: hal855: partnumber enable = 1 deactivate this register can only be written. ? the register has to be written with 2063 decimal (80f hexadecimal) for the deactivation. ? the sensor can be reset with an activate pulse on the output pin or by switching off and on the supply voltage. special customer partnumber enable 16 output + bittime = table 5?3: available register addresses for hal855 register code data bits format customer remark currentsource 1 10 binary read/write/program in case of hal855: used to define output slew rate in case of hal856: used to define output current levels (i dd_high and i dd_low ) partnumber 2 11 binary read/write/program only with biphase-m mode shift 3 11 two?s compl. read/write/program slope 4 14 signed binary read/write/program mode 5 14 binary read/write/program range, filter, and output for- mat settings lock 6 1 binary write/program lock bit digital readout 7 12 binary read digital value after signal pro- cessing offset correction 85 two?s compl. (4 lsbs) read/write/program compensation of system offsets specialcust. 9 6 binary read/write/program special customer register to define biphase-m bittime and partnumber enable tc 11 6 signed binary (6 lsbs) read/write/program linear temperature coeffi- cient tcsq 12 5 binary read/write/program quadratic temperature coef- ficient deactivate 15 11 binary write deactivate the sensor curve low 0 ... 15 9 binary write/read/program setpoints 0 to 15 curve high 0 ... 15 9 binary write/read/program setpoints 16 to 31
hal855 data sheet 40 nov. 26, 2008; dsh000149_003en micronas 5.6. programming information if the content of any register is to be changed, the desired value must first be written into the correspond- ing ram register. before reading out the ram register again, the register value must be permanently stored in the eeprom. permanently storing a value in the eeprom is done by first sending an erase command followed by sending a prom command and a read command. the address within the erase and prom commands is not important. erase and prom act on all registers in parallel. if all hal855 registers are to be changed, all writing commands can be sent one after the other, followed by sending one erase and prom command at the end. during all communication sequences, the customer has to check if the communication with the sensor was successful. this means that the acknowledge and the parity bits sent by the sensor have to be checked by the customer. if the micronas programmer board is used, the customer has to check the error flags sent from the programmer board. it is recommended to use the programmer board version 5.1. further information for the programming of the sensor can be found in the application note for the program- mer board. note: for production and qualification tests, it is man- datory to set the lock bit after final adjustment and programming of hal855. the lock func- tion is active after the next power-up of the sen- sor. the success of the lock process should be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. electrostatic discharges (esd) may disturb the programming pulses. please take precautions against esd.
data sheet hal855 micronas nov. 26, 2008; dsh000149_003en 41 intentionally left vacant
hal855 data sheet 42 nov. 26, 2008; dsh000149_003en micronas micronas gmbh hans-bunte-strasse 19 ? d-79108 freiburg ? p.o. box 840 ? d-79008 freiburg, germany tel. +49-761-517-0 ? fax +49-761-517-2174 ? e-mail: docservice@micronas.com ? internet: www.micronas.com 6. data sheet history 1. data sheet: ?hal85x programmable linear hall- effect sensor?, dec. 5, 2005, 6251-604-1ds. first release of the data sheet. major changes: ? section 3.6. characteristics changed ? section 2. functional description: new features added ? section 2.3. calibration procedure: completely updated 2. data sheet: ?hal855 programmable linear hall- effect sensor with arbitrary output characteristic?, oct. 23, 2008, dsh000149_001en. first release of the hal855 data sheet. major changes: ? the previous data sheet for hal85x has been sep- arated into two individual data sheets, one each for hal855 and for hal856. this document describes hal855 only. ? section 1.6."solderability and welding" updated ? section 4.4."temperature compensation" updated ? section 4.7."start-up behavior" added 3. data sheet: ?hal855 programmable linear hall- effect sensor with arbitrary output characteristic?, oct. 29, 2008, dsh000149_002en. second release of the hal855 data sheet. minor change: ? section 3.4."absolute maximum ratings": v out updated 4. data sheet: ?hal855 programmable linear hall- effect sensor with arbitrary output characteristic?, nov. 26, 2008, dsh000149_003en. third release of the hal855 data sheet. originally created for hw version hacd-4-4. minor change: ? note regarding usage of the sensor beyond recom- mended operating conditions added

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